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6BD11
High-Mu Triode - Medium-Mu - Sharp-Cutoff Pentode

EIA Base & Outline

EIA Base: 12DPEIA Bulb: 9-58

Substitute Data

Preferred Substitutes ......................... 6AF11 6AS11
Source ........................................ GE DS 12/63

Application

Source ........................................ GE DS 12/63
Duodecar type used in tv receiver applications. Triode 1 is used in general-purpose applications, triode 2 is used as sync-separator circuits and the pentode used as a video amplifier. Requires duodecar 12-contact socket.

Mechanical Data

Source ........................................ GE DS 12/63
Bulb .......................................... T-9
Base Type ..................................... E12-70 Button 12-Pin
EIA Outline ................................... 9-58
EIA Base ...................................... 12DP
Cathode ....................................... Coated Unipotential
Mounting Position ............................. Any

Electrical Data

Source ........................................ GE DS 12/63
Heater Voltage ................................ 6.3 V
Heater Current ................................ 1.05 A
Maximum Heater-Cathode Voltage
Heater Positive with Respect to Cathode
DC Component ............................ 100 V
Total DC and Peak ....................... 200 V
Heater Negative with Respect to Cathode
DC Component ............................ 200 V
Total DC and Peak ....................... 200 V

Direct Interelectrode Capacitances (approx)

Triode 1
Source ........................................ GE DS 12/63
Input ......................................... 3.0 pf
Output ........................................ 2.2 pf
Grid to Plate ................................. 1.9 pf

Triode 2
Source ........................................ GE DS 12/63
Input ......................................... 2.4 pf
Output ........................................ 3.8 pf
Grid to Plate ................................. 3.6 pf

Pentode
Source ........................................ GE DS 12/63
Input ......................................... 11.0 pf
Output ........................................ 4.6 pf
Grid to Plate ................................. 0.13 pf

Maximum Ratings (Design Center Values)

Pentode
Source ........................................ GE DS 12/63
Plate Voltage ................................. 330 V
Grid No. 2 Voltage ............................ 330 V
Positive Grid No. 1 Voltage ................... 0 V
Plate Dissipation ............................. 4 W
Grid No. 2 Dissipation ........................ 1.1 W
Grid No. 1 Circuit Resistance
Fixed Bias ................................. 1M Ω
Self Bias .................................. 1M Ω

Triode 1
Source ........................................ GE DS 12/63
Plate Voltage ................................. 330 V
Positive Grid No. 1 Voltage ................... 0 V
Plate Dissipation ............................. 1.5 W
Grid No. 1 Circuit Resistance
Fixed Bias ................................. 500K Ω
Self Bias .................................. 1M Ω

Triode 2
Source ........................................ GE DS 12/63
Plate Voltage ................................. 330 V
Positive Grid No. 1 Voltage ................... 0 V
Plate Dissipation ............................. 2 W
Grid No. 1 Circuit Resistance
Fixed Bias ................................. 500K Ω
Self Bias .................................. 1M Ω

Characteristics and Typical Operation

Triode 1 Class A Amplifier
Source ........................................ GE DS 12/63
Plate Voltage ................................. 200 V
Grid No. 1 Voltage ............................ -2 V
Amplification Factor .......................... 68
Plate Resistance (approx) ..................... 12.4K Ω
Transconductance .............................. 5500 µMho
Plate Current ................................. 7 mA
Grid No. 1 Voltage for Ib ..................... 100 µa @ -5.5 V

Triode 2 Class A Amplifier
Source ........................................ GE DS 12/63
Plate Voltage ................................. 200 V
Grid No. 1 Voltage Derived from
Cathode Bias Resistor ...................... 220 Ω
Amplification Factor .......................... 41
Plate Resistance (approx) ..................... 9.4K Ω
Transconductance .............................. 4400 µMho
Plate Current ................................. 9.2 mA
Grid No. 1 Voltage for Ib ..................... 100 µa @ -6.5 V

Pentode Class A Amplifier
Source ........................................ GE DS 12/63
Plate Voltage ................................. 135 V
Grid No. 2 Voltage ............................ 135 V
Grid No. 1 Voltage Derived from
Cathode Bias Resistor ...................... 100 Ω
Plate Resistance (approx) ..................... 45K Ω
Transconductance .............................. 10400 µMho
Plate Current ................................. 17 mA
Grid No. 2 Current ............................ 4 mA
Grid No. 1 Voltage for Ib ..................... 100 µa @ -6 V

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Tue, 29 Nov 2022 19:58:00 -0700